Effects of Interfacial Parameters and Temperature on Effective Schottky Barrier Height of Metal-Wrapped (Al-Gan) Nanowire Schottky Diode
DOI:
https://doi.org/10.62054/ijdm/0104.08Keywords:
Effective Schottky barrier height, Interface parameters, Metal-Semiconductor junction, Nanowire, Temperature.Abstract
Junction interface parameters (interface states density, interface layer thickness, interface permittivity and neutral surface states) and temperature effects have been studied. Results have shown that for the scaled structure doping functions below degeneracy state and temperature have significant impact on the effective Schottky barrier height while the interface parameters show no significant change. The barrier height has been observed to increase as the temperature increases almost linearly by ~5.171×10-3eV with increase in temperature from 300K to 420 K and this may be associated with the avalanched charge carriers being transported across the barrier height. The interface layer thickness in the range of 1.5 nm to 3.0 nm shows no effect on the carrier transport characteristics curves of the Schottky diode whereas the ideality factor has been found to decrease with an increase in temperature.
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