Effects of Interfacial Parameters and Temperature on Effective Schottky Barrier Height of Metal-Wrapped (Al-Gan) Nanowire Schottky Diode. International Journal of Development Mathematics (IJDM), [S. l.], v. 1, n. 4, p. 099–111, 2024. DOI: 10.62054/ijdm/0104.08. Disponível em: https://ijdm.org.ng/index.php/Journals/article/view/112.. Acesso em: 27 jul. 2026.